| PART |
Description |
Maker |
| UPG2214TB-E4-A |
50 MHz - 3000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 0.65 dB INSERTION LOSS
2-WIRE FACTORY PROGRAMMED W/TIN PLATING
NECs W LOW VOLTAGE L/ S-BAND SPDT SWITCH
NECs ?W LOW VOLTAGE L, S-BAND SPDT SWITCH
|
NEC Corp.
|
| PS7802-1A-F4 PS7802-1A PS7802 PS7802-1A-F3 PS78021 |
邻舍4针超小型平引脚，低输出电1通道光学耦合MOSFET
A6595 SOIC
LED Driver IC; Driver Type:LED; Package/Case:16-QFN; Leaded Process Compatible:Yes; No. of Drivers:1; Operating Temp. Max:85 C; Operating Temp. Min:-40 C; Output Current Max:150mA; Output Current Min:10mA; Output Voltage Max:3V RoHS Compliant: Yes
1.3 OHM SERIAL INPUT DMOS DRIVER
NECs 4-PIN ULTRA SMALL FLAT-LEAD, LOW OUTPUT CAPACITANCE 1-CH OPTICAL COUPLED MOSFET
NECs 4-PIN ULTRA SMALL FLAT-LEAD / LOW OUTPUT CAPACITANCE 1-CH OPTICAL COUPLED MOSFET
NECs 4-PIN ULTRA SMALL FLAT-LEAD LOW OUTPUT CAPACITANCE 1-CH OPTICAL COUPLED MOSFET
|
NEC Corp.
NEC[NEC]
|
| NE851M33-T3-A |
NECs NPN SILICON TRANSISTOR 邻舍NPN硅晶体管
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories, Inc.
California Eastern Labs
|
| NESG2046M33-T3-A NESG2046M33 NESG2046M33-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION 邻舍npn型硅锗晶体管低噪声，高增益放
NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE5511279A NE5511279A-T1A NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET 邻舍7.5 V UHF频段射频功率硅劳工处场效应晶体管
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| UPG2027TQ UPG2027TQ-E1-A |
NECs L-BAND 4W HIGH POWER SPDT SWITCH IC
|
NEC
|
| NE66719-T1 NE66719 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NE85634-T1-A NE85633-A NE85618-A NE85618-T1-A NE85 |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Duracell
celduc-relais
|
